DMG7401SFG
P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI ?
Product Summary
Features and Benefits
V (BR)DSS
-30V
R DS(ON) max
13m ? @ V GS = -10V
25m ? @ V GS = -4.5V
I D max
T A = +25°C
-9.8A
-7.0A
?
?
?
Low R DS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
?
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description
This MOSFET has been designed to minimize the on-state resistance
?
?
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
(R DS(on) ) and yet maintain superior switching performance, making it
Mechanical Data
ideal for high efficiency power management applications.
Applications
?
?
Case: POWERDI3333
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
?
?
?
Backlighting
Power Management Functions
DC-DC Converters
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
POWERDI3333
?
Weight: 0.0174 grams (approximate)
Drain
S
S
Pin 1
S
G
Gate
D
ESD PROTECTED
D
D
D
Gate
Protection
Diode
Source
Ordering Information (Note 4)
Part Number
DMG7401SFG-7
DMG7401SFG-13
Top View
Bottom View
Case
POWERDI3333
POWERDI3333
Equivalent Circuit
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/packages.html
Marking Information
G75 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
POWERDI is a registered trademark of Diodes Incorporated
G75
WW = Week code (01 – 53)
DMG7401SFG
Document number: DS35623 Rev. 10 - 2
1 of 6
www.diodes.com
June 2013
? Diodes Incorporated
相关PDF资料
DMG7408SFG-7 MOSF N CH 30V 7A 3333-8
DMG7430LFG-7 MOSFET N CH 30V POWERDIA 3333-8
DMG7702SFG-7 MOSFET N-CH 30V 12A PWRDI3333-8
DMG8601UFG-7 MOSFET 2N-CH 20V 6.1A DFN
DMG8822UTS-13 MOSFET ARRAY 20V 4.9A 8TSSOP
DMG8880LK3-13 MOSFET N-CH 30V 11A TO252-3L
DMG9926UDM-7 MOSFET N-CH DUAL 20V 4.2A SOT-26
DMG9926USD-13 MOSFET 2N-CH 20V 8A SOP8L
相关代理商/技术参数
DMG7408SFG-7 功能描述:MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG7430LFG 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMG7430LFG-7 功能描述:MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG7702SFG 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
DMG7702SFG-13 功能描述:MOSFET 30V N-Ch ENH Mode PowerDI 12A - 9.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG7702SFG-7 功能描述:MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8,2K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG8601UFG 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG8601UFG-7 功能描述:MOSFET LDO POSITIVE REG 2.7V/1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube